? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c15a i dm t c = 25 c, pulse width limited by t jm 35 a i a t c = 25 c 15 a e as t c = 25 c 750 mj p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220 & to-247) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100054b(12/11) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 200 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 480 m ixta 15n50l2 ixtp 15n50l2 ixth 15n50l2 v dss = 500v i d25 = 15a r ds(on) 480 m linear l2 tm power mosfets w/ extended fbsoa n-channel enhancement mode avalanche rated g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d g d s to-220ab (ixtp) d (tab) to-263 aa (ixta) g s d (tab) features z designed for linear operation z international standard packages z avalanche rated z molding epoxies meet ul 94 v-0 flammability classification z guaranteed fbsoa at 75c advantages z easy to mount z space savings z high power density applications z solid state circuit breakers z soft start controls z linear amplifiers z programmable loads z current regulators
ixys reserves the right to change limits, test conditions, and dimensions. ixta15n50l2 ixtp15n50l2 IXTH15N50L2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 4.5 6.3 8.0 s c iss 4080 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 265 pf c rss 68 pf t d(on) 38 ns t r 73 ns t d(off) 110 ns t f 65 ns q g(on) 123 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 nc q gd 72 nc r thjc 0.42 c/w r thcs (to-220) 0.50 c/w (to-247) 0.25 c/w safe operating area specification characteristic values symbol test conditions min. typ. max. soa v ds = 400v, i d = 375ma, t c = 75c, t p = 2s 150 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 15 a i sm repetitive, pulse width limited by t jm 60 a v sd i f = 15a, v gs = 0v, note 1 1.5 v t rr 570 ns i f = 15a, -di/dt = 100a/ s, v r = 100v, v gs = 0v to-247 outline 1 = gate 2 = drain 3 = source pins: 1 - gate 2 - drain 3 - source to-220 outline resistive switching times v gs = 10v, 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) note 1: pulse test, t 300 s, duty cycle, d 2%. to-263 outline 1 = gate 2 = drain 3 = source 4 = drain
? 2011 ixys corporation, all rights reserved ixta15n50l2 ixtp15n50l2 IXTH15N50L2 fig. 1. output characteristics @ t j =25oc 0 2 4 6 8 10 12 14 16 01234567 v ds - volts i d - amperes v gs = 20v 12v 10v 9v 6 v 8 v 7 v 5 v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 6 v 5 v 7 v 8 v 9v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 14 16 02468101214 v ds - volts i d - amperes v gs = 20v 10v 9v 7 v 8v 5v 6v fig. 4. r ds(on) normalized to i d = 7.5a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 15a i d = 7.5a fig. 5. r ds(on) normalized to i d = 7.5a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 5 10 15 20 25 30 35 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta15n50l2 ixtp15n50l2 IXTH15N50L2 fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 0 2 4 6 8 101214161820 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 0.5 0.6 0.7 0.8 0.9 1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 250v i d = 7.5a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2011 ixys corporation, all rights reserved ixys ref: t_15n50l2(6r)12-22-11-a ixta15n50l2 ixtp15n50l2 IXTH15N50L2 fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit dc 10ms 100ms fig. 14. forward-bias safe operating area @ t c = 75oc 0.1 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
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